EFFECT OF SIH4 CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C/

Authors
LIU CC LEE CY CHENG KL CHENG HC YEW TR
Citation
Cc. Liu et al., EFFECT OF SIH4 CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C/, Applied physics letters, 66(2), 1995, pp. 168-170
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
2
Year of publication
1995
Pages
168 - 170
Database
ISI
SICI code
0003-6951(1995)66:2<168:EOSCFR>2.0.ZU;2-W