INALAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON LOW-TEMPERATURE INALAS BUFFER LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
PAN N ELLIOTT J HENDRIKS H AUCOIN L FAY P ADESIDA I
Citation
N. Pan et al., INALAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON LOW-TEMPERATURE INALAS BUFFER LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 66(2), 1995, pp. 212-214
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
2
Year of publication
1995
Pages
212 - 214
Database
ISI
SICI code
0003-6951(1995)66:2<212:IIHTOL>2.0.ZU;2-Z