SILICON DOPING WITH MODULATED BEAM EPITAXY IN THE GROWTH OF GAAS(111)A

Authors
FAHY MR SATO K JOYCE BA
Citation
Mr. Fahy et al., SILICON DOPING WITH MODULATED BEAM EPITAXY IN THE GROWTH OF GAAS(111)A, Applied surface science, 82-3, 1994, pp. 14-17
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
82-3
Year of publication
1994
Pages
14 - 17
Database
ISI
SICI code
0169-4332(1994)82-3:<14:SDWMBE>2.0.ZU;2-Y
Abstract
The site occupancy of Si introduced as a dopant in the growth of GaAs on GaAs(111)A has been shown to be very sensitive to growth conditions . We have examined the effect of modulating the AS4 and Ga fluxes on t his behaviour. Supplying Ga and As sequentially rather than simultaneo usly always results in a much stronger tendency for the Si to occupy a n As site and act as an acceptor than for material grown by convention al molecular beam epitaxy. The same result is obtained irrespective of whether the Si is supplied with the As or Ga.