SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES

The present experiments demonstrate the epitaxial growth (EG) and sele ctive epitaxial growth (SEG) of GaInP by low-pressure metalorganic che mical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), tr imethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporati on efficiency using TEG+EDMI is found to be lower than those using oth er combinations. Completely selective epitaxy using TEGa + EDMIn can b e achieved at a growth temperature of 675-degrees-C and at a growth pr essure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolutio n double-crystal X-ray measurements are used to investigate the compos itional variation in the selectively epitaxial-grown area.