H. Asahi et al., OPTICAL-PROPERTIES OF ATOMIC LAYER GROWN INAS ALSB QUANTUM-WELL STRUCTURES BY GAS-SOURCE MIGRATION-ENHANCED EPITAXY/, Applied surface science, 82-3, 1994, pp. 109-114
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
InAs/AlSb quantum well (QW) structures with InAs buffer layers are gro
wn on (001) GaSb substrates by gas source MEE (migration enhanced epit
axy). PL (photoluminescence) measurements show that the optical proper
ties of InAs/AlSb QWs strongly depend on the shutter sequence at the i
nterfaces and therefore the type of the heterointerfaces (InSb-type, A
lAs-type). 77 K PL intensity from the QWs with InSb-type interfaces is
much stronger than that with AlAs-type interfaces. Furthermore, the t
emperature variation of the former is much weaker than that of the lat
ter. However, the 4.2 K PL intensity is on nearly the same level for b
oth types. PL peak energy is also dependent on the heterointerface typ
es, which is explained by taking account of the potential profiles at
the interfaces; the InSb-type interfaces increase the effective thickn
ess of the InAs wells. These optical properties are different from tho
se of the InAs/AlSb QWs with AlSb buffer layers. The origin of the dif
ference is discussed.