MICROSCOPIC ANALYSIS OF INTERFACE STRUCTURE IN INGAAS INP MQW USING PENDELLOSUNG OSCILLATION AROUND A SATELLITE PEAK IN HIGH-RESOLUTION X-RAY-DIFFRACTION/

Pendellosung oscillation around a satellite peak in an X-ray rocking c urve has been used for investigating the interfacial structure in InGa As/InP multiple quantum wells (MQW) on the atomic scale. The MQWs were grown by metalorganic vapor phase epitaxy with growth interruption du ring which the ambience was changed from AsH3 to PH3, and vice versa. It was found that, in AsH3 ambience before the InGaAs growth, the exce ss AsH3 flow time caused inter-layer compositional fluctuation due to three-dimensional growth in the interfacial structures. On the other h and, in PH3 ambience before the InP growth, it was found that the crys talline qualities of the interfacial structures were degraded owing to the As desorption from the grown InGaAs layers. These results show th at the excellent sensitivity of Pendellosung oscillation around a sate llite peak can be used to evaluate interfacial structures such as atom ic-order transient layers in InGaAs/InP MQW.