M. Akamatsu et al., OPTICAL IN-SITU ANALYSIS OF GAAS ALAS/GAAS AND GAAS/(AL)GAAS/GAAS ATOMIC LAYER GROWTH USING GACL(3), ALCL(3) AND ASH(3)/, Applied surface science, 82-3, 1994, pp. 228-232
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Atomic layer growth of AlAs and AlGaAs were tried by alternate supply
of GaCl3, AlCl3 and AsH3, and the growth process was monitored by an o
ptical method such as the surface photo-absorption (SPA) method and th
e optical interference method. Although atomic layer epitaxy (ALE) of
GaAs can be performed by alternate supply of GaCl3 and AsH3, that of A
lAs on GaAs could not be obtained, probably due to surface oxidation o
f AlAs. AlAs, however, could be grown by simultaneous supply of AlCl3
and AsH3. It was confirmed by the SPA signal that if the AlCl3-adsorbe
d AlAs surface is exposed to GaCl3, the adsorbed AlCl3 is replaced by
GaCl and/or GaCl and GaAs ALE growth on AlAs can be performed. A sligh
tly Al-containing (Al)GaAs layer could be grown by addition of AlCl3 t
o GaCl3 in GaAs ALE growth.