SELF-LIMITING ADSORPTION OF THERMALLY CRACKED SICL2H2 ON SI SURFACES

We proposed SiCl2 as a new precursor for Si atomic layer epitaxy (ALE) . SiCl2 was produced by thermal cracking of dichlorosilane (SiCl2H2, D CS). A cracking efficiency of 70% was obtained at a cracking temperatu re of 800-degrees-C. The sticking coefficient of SiCl2 on Si surfaces was found to be 10(3) times larger than that of DCS. Based on temperat ure programmed desorption and Auger electron spectroscopy measurements , it was considered that SiCl2 dissociatively adsorbed to form a fully Cl-terminated surface. The results indicated that SiCl2 produced by D CS cracking is a favorable source for Si ALE due to its high sticking probability and self-limiting adsorption properties.