BORON DELTA-DOPING IN SI USING ATMOSPHERIC-PRESSURE CVD

Boron delta-doping was carried out by atmospheric chemical vapor depos ition. The process consists of removal of native oxide, boron adsorpti on at 500-degrees-C, cap-layer deposition, and solid phase epitaxy at 600-degrees-C. From SIMS results with various primary ion energies, it was found that the boron profile has a peak at the interface between the substrate and the epitaxial layer and its full width at half maxim um was a few nanometer. By evaluating the crystalline quality of the c ap layer, it was found that the amount of adsorbed boron atoms has to be less than a few monolayer to obtain a solid phase epitaxial layer.