Sm. George et al., ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY, Applied surface science, 82-3, 1994, pp. 460-467
Citations number
46
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Sequential ABAB... surface chemical reactions can be employed for atom
ic layer controlled deposition. We have examined the binary reactions
SiCl4 + 2 H2O --> SiO2 + 4 HCl for SiO2 deposition and 2 Al(CH3)3 + 3
H2O --> Al2O3 + 6 CH4 for Al2O3 deposition. Each binary reaction (A B --> products) was performed sequentially by individual exposures to
the A reactant and then the B reactant. If each surface reaction is se
lf-limiting, repetitive ABAB... cycling may produce layer-by-layer con
trolled growth. For example, the individual ''A'' and ''B'' surface re
actions for SiO2 deposition can be described by (A) Si-OH + SiCl4 -->
Si-O-SiCl3 + HCl, (B) Si-Cl + H2O --> Si-OH + HCl. We have studied ABA
B... binary reaction sequences for SiO2 and Al2O3 deposition using las
er-induced thermal desorption, temperature-programmed desorption and A
uger electron spectroscopy techniques on single-crystal Si(100) surfac
es. Fourier transform infrared spectroscopy techniques were also emplo
yed to examine these binary reaction schemes on high surface area SiO2
and Al2O3 samples. Controlled deposition of SiO2 and Al2O3 was demons
trated and optimized utilizing the above techniques. Under the appropr
iate conditions, each surface reaction was self-terminating and atomic
layer controlled growth was a direct consequence of the binary reacti
on sequence chemistry.