SURFACE MODIFICATION OF CAF2 IN ATOMIC LAYER SCALE BY ELECTRON-BEAM EXPOSURE

Authors
HWANG SM IZUMI A TSUTSUI K FURUKAWA S
Citation
Sm. Hwang et al., SURFACE MODIFICATION OF CAF2 IN ATOMIC LAYER SCALE BY ELECTRON-BEAM EXPOSURE, Applied surface science, 82-3, 1994, pp. 523-527
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
82-3
Year of publication
1994
Pages
523 - 527
Database
ISI
SICI code
0169-4332(1994)82-3:<523:SMOCIA>2.0.ZU;2-U
Abstract
Surface modification of CaF2/Si(111) was studied for the purpose of 1 ML adsorption of group-V atoms on a fluoride surface which is applicab le to heteroepitaxy of III-V compound semiconductors on CaF2. By using Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS), it was found that 1 ML of As and P were successfully adsorbed o n a CaF2 surface, and that a 1 ML self-limiting adsorption of As for t he electron beam exposure was realized. Also, we propose a model for t he adsorption conditions depending on the substrate temperature during surface modification.