THE EFFECT OF GROWTH-PARAMETERS ON THE DEPOSITION OF CAS THIN-FILMS BY ATOMIC LAYER EPITAXY

Authors
RAUTANEN J LESKELA M NIINISTO L NYKANEN E SOININEN P UTRIAINEN M
Citation
J. Rautanen et al., THE EFFECT OF GROWTH-PARAMETERS ON THE DEPOSITION OF CAS THIN-FILMS BY ATOMIC LAYER EPITAXY, Applied surface science, 82-3, 1994, pp. 553-558
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
82-3
Year of publication
1994
Pages
553 - 558
Database
ISI
SICI code
0169-4332(1994)82-3:<553:TEOGOT>2.0.ZU;2-6
Abstract
Ca(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S were use d as precursors for the deposition of CaS thin films by atomic layer e pitaxy (ALE). The growth on soda lime glass with and without alumina c oating was studied by varying source furnace and substrate temperature s. In addition, the Ca(thd)2 and H2S pulse and purge times as well as the total number of ALE cycles were varied to observe their influence on the growth. A narrow processing window for the ALE growth was found when the source and substrate temperatures were 180-200-degrees-C and 325-400-degrees-C, respectively. The CaS thin films processed under o ptimized conditions were crystalline and smooth.