Aluminum oxide films grown on silicon substrates by the ML-ALE method
were studied. The structures were grown from trimethyl aluminum (TMA),
H2O and NO2 at temperatures in the range of 150 to 310-degrees-C. The
se films were characterized by refracting index n = 1.68 + 0.02 (lambd
a = 632.8 nm) and relative permittivity epsilon = 5.3 + 0.2 (f = 1 MHz
). Electro-physical characteristics of these layers were measured in m
etal-insulator-semiconductor (MIS) and electrolyte-insulator-semicondu
ctor (EIS) systems. The threshold voltage of the MIS structure with Al
gate was about 7.5 MV/cm. The Si-Al2O3 structures had both electron a
nd hole traps. It was found that increasing the synthesis temperature
leads to a decrease of the concentration of electron traps and to an i
ncrease of hole traps. So it was shown that the ML-ALE method made it
possible to grow Si-Al2O3 structures similar to the well known Si-Si3N
4 structures. Si-Al2O3 structures may be used in electronic devices.