BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL STRUCTURES USING ION-IMPLANTATION

Authors
PIVA PG POOLE PJ CHARBONNEAU S KOTELES ES BUCHANAN M AERS G ROTH AP WASILEWSKI ZR BEAUVAIS J GOLDBERG RD
Citation
Pg. Piva et al., BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL STRUCTURES USING ION-IMPLANTATION, Superlattices and microstructures, 15(4), 1994, pp. 385-389
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
15
Issue
4
Year of publication
1994
Pages
385 - 389
Database
ISI
SICI code
0749-6036(1994)15:4<385:BTOSQS>2.0.ZU;2-F
Abstract
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectiv ely) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, an d lattice matched InGaAs/InP). Repeated sequential ion implants and ra pid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle . The effectiveness of broad area high energy implantation (8 MeV As4) on QW intermixing was also established for GRINSCH (graded-index sep arate confinement heterostructure) QW laser structures grown in InGaAs /GaAs. Lastly, preliminary work illustrating the effects of implant te mperature and ion current density was carried out for InGaAs/GaAs QWs.