RECOMBINATION DYNAMICS IN STRAINED IN1-XGAXAS INP QUANTUM-WELL STRUCTURES/

We present a comprehensive study of the excitonic recombination lifeti me in strained and unstrained In1-xGaxAs/InP-quantum well structures a s a function of well width and Ga mole fraction. In the lattice-matche d case a minimum lifetime of 650ps is observed for a well thickness of 2nm. For widths larger as well as smaller than 2nm the lifetime incre ases. In strained In1-xGaxAs/InP quantum wells the recombination lifet ime shows a strong dependence on the Ga content. While the lifetime is nearly constant in the compressively strained case (X(Ga) < 0.47), we observe a drastic increase with rising Ga content for tensile strain (X(Ga) > 0.47).