PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS GAAS QUANTUM-WELLS/

Authors
CESCHIN AM QUIVY AA SOARES JANT ENDERLEIN R TABATA A SCOLFARO LMR DASILVA ECF LEITE JR OLIVEIRA JBB MENESES EA
Citation
Am. Ceschin et al., PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS GAAS QUANTUM-WELLS/, Superlattices and microstructures, 15(3), 1994, pp. 333-337
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
15
Issue
3
Year of publication
1994
Pages
333 - 337
Database
ISI
SICI code
0749-6036(1994)15:3<333:PAPSOD>2.0.ZU;2-B
Abstract
Experimental and theoretical studies on delta-doped In0.15Ga0.85As/GaA s quantum wells are reported. Photoreflectance (PR) and Photoluminesce nce (PL) spectra are measured and compared with results of band struct ure and PL line shape calculations. The dominating structure seen in t he PL spectra is related to the delta-doping well. Its line shape is w ell described by k(parallel to)-non-conserving radiative transitions.