Gn. Carneiro et al., BINDING-ENERGIES AND INTRADONOR ABSORPTION-SPECTRA IN GAAS-GAALAS QUANTUM-WELLS, Semiconductor science and technology, 10(1), 1995, pp. 41-44
We present a variational calculation in the effective-mass approximati
on of the binding energies of shallow donors in a GaAs-GaAlAs quantum
wells. The energies and variational wavefunctions associated with the
1s-like ground state as well as some excited states (2s, 2p(x,y), 2p(z
), 3s, 3p(x,y) and 3p(z)-like) are obtained as functions of the positi
on of the impurity in the well. The intra-donor transition strengths a
nd the infrared absorption spectra are calculated and results compare
well with previous theoretical and experimental work.