BINDING-ENERGIES AND INTRADONOR ABSORPTION-SPECTRA IN GAAS-GAALAS QUANTUM-WELLS

Citation
Gn. Carneiro et al., BINDING-ENERGIES AND INTRADONOR ABSORPTION-SPECTRA IN GAAS-GAALAS QUANTUM-WELLS, Semiconductor science and technology, 10(1), 1995, pp. 41-44
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
1
Year of publication
1995
Pages
41 - 44
Database
ISI
SICI code
0268-1242(1995)10:1<41:BAIAIG>2.0.ZU;2-O
Abstract
We present a variational calculation in the effective-mass approximati on of the binding energies of shallow donors in a GaAs-GaAlAs quantum wells. The energies and variational wavefunctions associated with the 1s-like ground state as well as some excited states (2s, 2p(x,y), 2p(z ), 3s, 3p(x,y) and 3p(z)-like) are obtained as functions of the positi on of the impurity in the well. The intra-donor transition strengths a nd the infrared absorption spectra are calculated and results compare well with previous theoretical and experimental work.