MIDWAVELENGTH INFRARED DETECTION WITH INXGA1-XAS AL0.45GA0.55AS MULTIPLE-QUANTUM-WELL STRUCTURES/

Authors
LENCHYSHYN LC LIU HC BUCHANAN M WASILEWSKI ZR
Citation
Lc. Lenchyshyn et al., MIDWAVELENGTH INFRARED DETECTION WITH INXGA1-XAS AL0.45GA0.55AS MULTIPLE-QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 10(1), 1995, pp. 45-48
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
1
Year of publication
1995
Pages
45 - 48
Database
ISI
SICI code
0268-1242(1995)10:1<45:MIDWIA>2.0.ZU;2-G
Abstract
We demonstrate the detection of mid-wavelength (3-5 mum) infrared radi ation by intersubband transitions in In(x)Ga1-xAs/Al0.45Ga0.55As multi ple quantum well structures grown on GaAs substrates. The peak detecto r response is shifted from 4.8 to 4.3 mum by increasing the indium fra ction from x = 0.05 to x = 0.20, while simultaneously decreasing the w ell width to keep the first excited eigenstate near the top of the wel ls. These detectors can be combined in detector stacks with convention al long-wavelength (8-12 mum) infrared quantum well detectors for mult i-band imaging applications.