A COMPARISON OF SI-DOPED (100), (111)A, (111)B AND (311)B ALXGA1-XAS SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY

Authors
PAVESI L HENINI M JOHNSTON D HARRISON I
Citation
L. Pavesi et al., A COMPARISON OF SI-DOPED (100), (111)A, (111)B AND (311)B ALXGA1-XAS SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 10(1), 1995, pp. 49-55
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
1
Year of publication
1995
Pages
49 - 55
Database
ISI
SICI code
0268-1242(1995)10:1<49:ACOS((>2.0.ZU;2-L
Abstract
Hall and photoluminescence measurements of Si-doped Al0.3Ga0.7As sampl es grown by molecular beam epitaxy on high index surfaces are reported . These data are compared with structures grown on the conventional (1 00) orientation. All the samples measured in this work have been grown under identical conditions. For (100), (111)B and (311)B Al(x)Ga1-xAs we found an n-type doping while for (111)A Al(x)Ga1-xAs the doping wa s p-type. The growth parameters used are the optimum ones for (100) Al (x)Ga1-xAs. Growth under these conditions does not produce high qualit y (111)A or (111)B Al(x)Ga1-xAs. However, the (311)B Al(x)Ga1-xAs samp les show comparable characteristics to (100) Al(x)Ga1-xAs samples.