PHOTOELECTRICAL PROPERTIES OF CDXHG1-XTE EPITAXIAL LAYERS IRRADIATED BY NANOSECOND LASER-PULSES

CdxHg1-xTe epitaxial layers (x almost-equal-to 0.28) with cellular str ucture are studied. The influence of laser pulses of nanosecond durati on over a wide energy range on the photoelectrical and electrophysical properties of CdxHg1-xTe epitaxial layers is investigated. Laser puls es above the material melting threshold cause the formation of a subsu rface layer with a wider forbidden gap. This is connected with residua l stress and with the change of composition in the subsurface layer. I t has been shown that increasing photoconductivity of the studied laye rs is connected with the gettering properties of the regions of small disorientation towards the electrically active point defects.