LOW-RESISTIVITY CDS THIN-FILMS FORMED BY A NEW CHEMICAL-VAPOR TRANSPORT METHOD

Citation
A. Sanchez et al., LOW-RESISTIVITY CDS THIN-FILMS FORMED BY A NEW CHEMICAL-VAPOR TRANSPORT METHOD, Semiconductor science and technology, 10(1), 1995, pp. 87-90
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
1
Year of publication
1995
Pages
87 - 90
Database
ISI
SICI code
0268-1242(1995)10:1<87:LCTFBA>2.0.ZU;2-Q
Abstract
Formation of low-resistivity CdS thin films by a new chemical vapour t ransport (CVT) method, employing a carrier gas, is reported for the fi rst time. Film deposition was carried out in a quartz tube kept inside a tubular furnace. Chemical vapour transport was done using a screen- printed film of CdS with CdCl2 as the flux incorporated in the film. T he nature of the film depends on parameters like condensation temperat ure, cooling rate, substrate position etc. The extrinsic films showed an electrical conductivity of the order of 10(1) (OMEGA cm)-1 and the films which showed intrinsic nature exhibited a conductivity of the or der of 10(-8) (OMEGA cm)-1. A new CVT by gas system has been designed, and further studies are in progress to obtain thin film solar cell st ructures employing this technique.