A. Sanchez et al., LOW-RESISTIVITY CDS THIN-FILMS FORMED BY A NEW CHEMICAL-VAPOR TRANSPORT METHOD, Semiconductor science and technology, 10(1), 1995, pp. 87-90
Formation of low-resistivity CdS thin films by a new chemical vapour t
ransport (CVT) method, employing a carrier gas, is reported for the fi
rst time. Film deposition was carried out in a quartz tube kept inside
a tubular furnace. Chemical vapour transport was done using a screen-
printed film of CdS with CdCl2 as the flux incorporated in the film. T
he nature of the film depends on parameters like condensation temperat
ure, cooling rate, substrate position etc. The extrinsic films showed
an electrical conductivity of the order of 10(1) (OMEGA cm)-1 and the
films which showed intrinsic nature exhibited a conductivity of the or
der of 10(-8) (OMEGA cm)-1. A new CVT by gas system has been designed,
and further studies are in progress to obtain thin film solar cell st
ructures employing this technique.