ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES

Authors
CHELLES S FERREIRA R VOISIN P
Citation
S. Chelles et al., ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES, Semiconductor science and technology, 10(1), 1995, pp. 105-109
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
1
Year of publication
1995
Pages
105 - 109
Database
ISI
SICI code
0268-1242(1995)10:1<105:OTDOPO>2.0.ZU;2-P
Abstract
We examine theoretically the problem of the polarization dependence of guided-wave devices. We show that tensile-strained quantum wells near the light-and heavy-hole degeneracy provide almost equal absorption s pectra and nearly identical electroabsorption curves in the TE and TM modes, which are necessary features for on-line applications such as s ignal amplification and pulse reshaping in optical fibre telecommunica tion systems.