TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFECTS IN A DIRECTIONALLY GROWN AL-CU-CO-GE SINGLE QUASI-CRYSTAL

Authors
Citation
Lf. Chen et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFECTS IN A DIRECTIONALLY GROWN AL-CU-CO-GE SINGLE QUASI-CRYSTAL, Philosophical magazine letters, 71(1), 1995, pp. 51-57
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09500839
Volume
71
Issue
1
Year of publication
1995
Pages
51 - 57
Database
ISI
SICI code
0950-0839(1995)71:1<51:TESODI>2.0.ZU;2-7
Abstract
Large single decagonal quasicrystals of Al-Cu-Co-Ge alloy about 0.8 mm in diameter and 10 mm in length have been obtained by the directional growth technique. The single decagonal quasicrystals show decaprismat ic morphology and their perfection was examined by electron diffractio n. It was found that the perfection of these single quasicrystals depe nds on the growth rate during the directional solidification. A high d ensity of mixed dislocations with Burgers vectors b parallel to the te nfold axis and stacking faults with displacement vectors R parallel to the tenfold axis were introduced into the quasicrystals during rapid directional growth. The effects of the temperature gradient and rate o f growth on the defect formation during directional growth are discuss ed.