Structural data, electrical transport and dielectric properties are re
ported for Er2Cu2O5. Similar to La2CuO4, this cuprate oxide reveals a
two-dimensional CuO2 network. At low temperatures and high frequencies
the electrical transport is dominated by hopping conductivity process
es. The dielectric constant epsilon approximate to 9.0(5) has been det
ermined from high frequency measurements. At high temperatures and low
frequencies d.c. conductivity contributions dominate and characterize
Er2Cu2O5 as a conventional semiconductor with a gap E(G) = 1.4 eV.