NUCLEATION AND ORDERING OF MOSI2 ON SI(100)

Molybdenum deposition on clean Si(100) with a fluence as low as 1-4 mo nolayers suffices to nucleate molybdenum disilicide. At 640 degrees C, disilicide growth is initiated by the formation of small crystallites of hexagonal MoSi2, separated by clean, but roughened, Si(100)-2 X 1, as revealed by scanning tunneling microscopy, Auger electron spectros copy, and glancing angle X-ray diffraction. At 770 degrees C, molybden um deposition leads to tetragonal MoSi2 preferentially oriented with r espect to the silicon substrate.