ION-BEAM DEPOSITION OF DIAMOND-LIKE CARBON FROM AN RF INDUCTIVELY-COUPLED CH4-PLASMA SOURCE

In this paper, we describe a robust process for depositing diamond-lik e carbon (DLC) films from an r.f. inductively coupled CH4-plasma sourc e (18 cm in diameter). This process represents a significant improveme nt in ability to carry out reliable fault-free and long duration opera tion. A pure Maxwellian distribution of discharge electrons (homogenei ty) and a wide range of electron temperatures are important attributes of the r.f. plasma source. By variation of r.f. power the composition and plasma density were optimized to minimize the source contaminatio n and provide enhanced deposition stability and reproducibility. Beam energy was varied in the range 100-900 eV to obtain different combinat ions of sp(3)/sp(2) ratio and level of hydrogenation. Hard coatings wi th high electrical resistivity and moderate stress were deposited on t he silicon, silicon dioxide, glass, and Al2O3-TiC substrates. Depositi on rate and coatings thickness ranges were 10-40 nm/min and 5-1000 nm, respectively. The deposition uniformity was within 3% over 16.5 cm.