FORMATION OF YBA2CU3O7 FILMS ON SILICON SILICIDE OXIDE STRUCTURES FORMED VIA AMORPHOUS COZR ALLOYS

Thin films of the superconductor YBa2Cu3O7 have been grown on Si(111)/ CoSi2/ZrO2 structures by inverted cylindrical magnetron sputter deposi tion at 700 degrees C. The CoSi2/ZrO2 bilayer structure was formed sim ultaneously by annealing an amorphous CoZr alloy layer in O-2 at 650 d egrees C. The amorphous alloy was formed by solid state reaction of cr ystalline Co and Zr under long anneals at a temperature below the crys tallization temperature of the CoZr alloy. The bilayer formation gave a polycrystalline ZrO2 and an epitaxial CoSi2 layer aligned with the S i(111) substrate, with a channelling yield of 40%. YBa(2)Cu3O(7) films grown on this multilayered structure had a T-c of 81 K and a transiti on width, Delta T, of 3 K as measured by resistivity readings.