DISTRIBUTION OF SIO2 PRECIPITATES IN LARGE, OXYGEN-RICH CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS AFTER ANNEALING AT 750-DEGREES-C

Authors
BOUCHARD R SCHNEIDER JR GUPTA S MESSOLORAS S STEWART RJ NAGASAWA H ZULEHNER W
Citation
R. Bouchard et al., DISTRIBUTION OF SIO2 PRECIPITATES IN LARGE, OXYGEN-RICH CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS AFTER ANNEALING AT 750-DEGREES-C, Journal of applied physics, 77(2), 1995, pp. 553-562
Citations number
38
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
553 - 562
Database
ISI
SICI code
0021-8979(1995)77:2<553:DOSPIL>2.0.ZU;2-U