OXIDE-GROWTH, REFRACTIVE-INDEX, AND COMPOSITION DEPTH PROFILES OF STRUCTURES FORMED BY 2-MEV OXYGEN IMPLANTATION INTO SILICON

Authors
HATZOPOULOS N SIAPKAS DI HEMMENT PLF
Citation
N. Hatzopoulos et al., OXIDE-GROWTH, REFRACTIVE-INDEX, AND COMPOSITION DEPTH PROFILES OF STRUCTURES FORMED BY 2-MEV OXYGEN IMPLANTATION INTO SILICON, Journal of applied physics, 77(2), 1995, pp. 577-586
Citations number
53
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
577 - 586
Database
ISI
SICI code
0021-8979(1995)77:2<577:ORACDP>2.0.ZU;2-D