THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON THE INTERFACIALSTRESS AND STRUCTURE OF SILICON DIOXIDE GATE DIELECTRICS

Authors
YOUNT JT LENAHAN PM WYATT PW
Citation
Jt. Yount et al., THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON THE INTERFACIALSTRESS AND STRUCTURE OF SILICON DIOXIDE GATE DIELECTRICS, Journal of applied physics, 77(2), 1995, pp. 699-705
Citations number
80
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
699 - 705
Database
ISI
SICI code
0021-8979(1995)77:2<699:TEOTNA>2.0.ZU;2-8