ELECTRICAL-PROPERTIES AND DEGRADATION KINETICS OF COMPENSATED HYDROGENATED MICROCRYSTALLINE SILICON DEPOSITED BY VERY HIGH-FREQUENCY-GLOW DISCHARGE

Authors
FLUCKIGER R MEIER J GOETZ M SHAH A
Citation
R. Fluckiger et al., ELECTRICAL-PROPERTIES AND DEGRADATION KINETICS OF COMPENSATED HYDROGENATED MICROCRYSTALLINE SILICON DEPOSITED BY VERY HIGH-FREQUENCY-GLOW DISCHARGE, Journal of applied physics, 77(2), 1995, pp. 712-716
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
712 - 716
Database
ISI
SICI code
0021-8979(1995)77:2<712:EADKOC>2.0.ZU;2-M