QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT

Authors
LAU WS CHAN DSH PHANG JCH CHOW KW PEY KS LIM YP SANE V CRONQUIST B
Citation
Ws. Lau et al., QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT, Journal of applied physics, 77(2), 1995, pp. 739-746
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
739 - 746
Database
ISI
SICI code
0021-8979(1995)77:2<739:QIOLDI>2.0.ZU;2-Q