PHOTOLUMINESCENCE OF RADIATION-INDUCED DEFECTS IN 3C-SIC EPITAXIALLY GROWN ON SI

Authors
ITOH H YOSHIKAWA M NASHIYAMA I OKUMURA H MISAWA S YOSHIDA S
Citation
H. Itoh et al., PHOTOLUMINESCENCE OF RADIATION-INDUCED DEFECTS IN 3C-SIC EPITAXIALLY GROWN ON SI, Journal of applied physics, 77(2), 1995, pp. 837-842
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
2
Year of publication
1995
Pages
837 - 842
Database
ISI
SICI code
0021-8979(1995)77:2<837:PORDI3>2.0.ZU;2-Y