ENHANCED RAMAN-SCATTERING IN POROUS SILICON

Authors
ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID AVERBUKH BY
Citation
Av. Andrianov et al., ENHANCED RAMAN-SCATTERING IN POROUS SILICON, Semiconductors, 28(12), 1994, pp. 1213-1215
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
12
Year of publication
1994
Pages
1213 - 1215
Database
ISI
SICI code
1063-7826(1994)28:12<1213:ERIPS>2.0.ZU;2-Z