PROSPECTS FOR SILICON MONOLITHIC OPTOELECTRONICS WITH POLYMER LIGHT-EMITTING-DIODES

Citation
Hh. Kim et al., PROSPECTS FOR SILICON MONOLITHIC OPTOELECTRONICS WITH POLYMER LIGHT-EMITTING-DIODES, Journal of lightwave technology, 12(12), 1994, pp. 2114-2121
Citations number
27
Categorie Soggetti
Optics
ISSN journal
07338724
Volume
12
Issue
12
Year of publication
1994
Pages
2114 - 2121
Database
ISI
SICI code
0733-8724(1994)12:12<2114:PFSMOW>2.0.ZU;2-0
Abstract
We have fabricated a monolithically integrated photodetector and ampli fier in silicon bipolar technology and organic polymer light emitting diodes (LED's) using both poly (p-phenylene vinylene) (PPV) and its so luble derivative poly (2-methoxy, 5-(2'-ethyl-hexoxy)-1,4-phenylene vi nylene) (MEH-PPV). Based on the individual capabilities of the photo-r eceiver and LED, we have begun to evaluate the feasibility of monolith ic integration of opto-electronics for silicon chip-to-chip communicat ion using both PPV-LED's and Si photoreceivers on Si chips. LED's made from PPV and its soluble derivative such as MEH-PPV are thought to be process-compatible with Si IC technology. However, as an additional r equirement, the polymer LED's must emit large enough power to be detec ted by the receiver with an acceptable bit-error-rate (BER).