Hh. Kim et al., PROSPECTS FOR SILICON MONOLITHIC OPTOELECTRONICS WITH POLYMER LIGHT-EMITTING-DIODES, Journal of lightwave technology, 12(12), 1994, pp. 2114-2121
We have fabricated a monolithically integrated photodetector and ampli
fier in silicon bipolar technology and organic polymer light emitting
diodes (LED's) using both poly (p-phenylene vinylene) (PPV) and its so
luble derivative poly (2-methoxy, 5-(2'-ethyl-hexoxy)-1,4-phenylene vi
nylene) (MEH-PPV). Based on the individual capabilities of the photo-r
eceiver and LED, we have begun to evaluate the feasibility of monolith
ic integration of opto-electronics for silicon chip-to-chip communicat
ion using both PPV-LED's and Si photoreceivers on Si chips. LED's made
from PPV and its soluble derivative such as MEH-PPV are thought to be
process-compatible with Si IC technology. However, as an additional r
equirement, the polymer LED's must emit large enough power to be detec
ted by the receiver with an acceptable bit-error-rate (BER).