Sj. Mahon et Dj. Skellern, MODELING DRAIN AND GATE DEPENDENCE OF HEMT 1-50-GHZ, SMALL-SIGNAL S-PARAMETERS, AND DC DRAIN CURRENT, IEEE transactions on microwave theory and techniques, 43(1), 1995, pp. 213-216
We present refinements to a previously validated HEMT model that impro
ves the model's accuracy as a function of drain bias for simulating d.
c. drain current and 1-50 GHz, small-signal S-parameters. By comparing
simulation data with experimental data for a 0.4-mu m-gate pseudomorp
hic HEMT, we have been able to establish the accuracy of the refined m
odel, which predicts the device's d.c. current and S-parameters as a f
unction of the applied drain and gate biases to within an accuracy of
similar to 5%. The core of the model and, in particular, its bias depe
ndence, are directly dependent on the HEMT wafer structure and the phy
sical gate length.