VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES

Authors
VEDENEEV AS ZHDAN AG PONOMAREV AN SIZOV VE
Citation
As. Vedeneev et al., VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES, Instruments and experimental techniques, 37(4), 1994, pp. 479-484
Citations number
17
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
37
Issue
4
Year of publication
1994
Part
2
Pages
479 - 484
Database
ISI
SICI code
0020-4412(1994)37:4<479:VSFFPO>2.0.ZU;2-0
Abstract
A facility for studying galvanomagnetic effects uses the two-frequency technique and a digital phase-sensitive detection of the signal. In s tudies of high-resistance samples (R less than or equal to 10(11) Omeg a) the error in the Hall voltage (similar to 1 mu V) and the noise sup pression (similar or equal to 80 dB) are controlled by the sensitivity and resolution of the digital devices. The electron mobility in a mod ulation doped GaAs-GaAlAs heterojunction has been derived for a wide r ange of electron densities (three orders of magnitude) from the geomet rical magnetoresistance as a function of the gate voltage.