VERSATILE RELAXATION SPECTROSCOPY TECHNIQUE FOR SOLID INTERFACES

The paper describes a versatile relaxation spectroscopy technique for solid interfaces based on the concurrent detection of two relaxation s ignals, namely the total current through the external circuit versus t he time or temperature, and the high-frequency capacitance of the spec imen due to a relaxation of the nonequilibrium state about the interfa ce. The technique is more accurate and yields more information than th e traditional one. A block diagram of an automated facility built arou nd a desk-top computer to implement the technique and process data is given. The technique's efficiency is illustrated using the example of nonequilibrium carrier generation and the thermal depolarization of th e dielectric in Si MOS structures.