The design and parameters of a detector head are given for a composite
Si:Sb bolometer at 4.2 degrees K. The device is used for recording th
e transmission spectra of semiconductors in the 50-150-mu m band under
a magnetic field of up to 9 T. The detector head's overall diameter i
s 26 mm and it consists of the bolometer, a load resistor, a conical c
oncentrator, a cut-off m. filter, and a Light guide. At a background r
adiation power of 30 mu W the bolometer responsivity at a modulation f
requency of 62 HE is 2.10(4) V/W, and the noise-equivalent power is 7.
5.10(-13) W/Hz(-1/2), which is controlled primarily by the background
fluctuations.