TRIDIMENSION STRUCTURAL CHARACTERIZATION OF POROUS SILICON BY TRANSMISSION ELECTRON-MICROSCOPY AND RAMAN-SCATTERING

Authors
RIBEIRO E CERDEIRA F TESCHKE O
Citation
E. Ribeiro et al., TRIDIMENSION STRUCTURAL CHARACTERIZATION OF POROUS SILICON BY TRANSMISSION ELECTRON-MICROSCOPY AND RAMAN-SCATTERING, Solid state communications, 101(5), 1997, pp. 327-331
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
101
Issue
5
Year of publication
1997
Pages
327 - 331
Database
ISI
SICI code
0038-1098(1997)101:5<327:TSCOPS>2.0.ZU;2-B
Abstract
Porous silicon structures are modeled based on their bidimensional ima ges obtained by transmission electron microscopy and Raman spectroscop y. Connected (wire diameters similar to 15 Angstrom) and isolated sili con structures show different Raman line shapes. Comparing experimenta l spectra with those simulated by models appropriate for each type of structure, we obtain results consistent with cylindrical nanocrystals with a 3:1 length-to-diameter ratio and average diameters of similar t o 50 Angstrom for both connected and isolated structures. Copyright (C ) 1996 Elsevier Science Ltd