GOLD IN SILICON AND OTHER ANALOGOUS DONORS AND ACCEPTORS

Recent results on the substitutional Au and interstitial Fe deep-level impurities in silicon are discussed in some detail. Their excitation spectra are due to transitions from a deep ground state to shallow sta tes. The good understanding of the electronic structure of the shallow states as well as their response to external perturbations, i.e., uni axial stress and magnetic field, allows for a detailed investigation o f the electronic structure of the deep states.