LONGLIVING EXCITED-STATES OF IMPURITIES IN SI

Phenomena due to existence of longliving excited states of some III an d V group impurities in Si are considered. The dependences of extrinsi c photoconductivity under microwave bias on excitation intensity, temp erature, majority and minority impurity concentration are explained by the model of polarization hopping photoconductivity. A strong influen ce of background radiation intensity on infrared absorption by longliv ing excited states is observed. Absorption spectra of longliving excit ed states of B and As impurities are obtained.