HYDROGEN PASSIVATION OF CD-ACCEPTORS IN III-V-SEMICONDUCTORS STUDIED BY PAC SPECTROSCOPY

Formation, structure, and stability of hydrogen correlated complexes, created at Cd accepters in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at differe nt energies. The different complexes were monitored by the perturbed a ngular correlation technique (PAC). In InP and GaP, the stability of C d-H pairs is very similar for comparable Cd concentrations (E(D) = 1.4 (2) eV and E(D) = 1.5(1) eV). In InAs, two different hydrogen correlat ed configurations are observed, one could be identified as Cd-H pair, oriented in [111] lattice direction (v(Q) = 427 MHz, eta = 0). The sec ond complex involves at least one H atom and radiation defects or, fav oured by a defect induced, secondary mechanism several hydrogen atoms.