NITROGEN DOPING IN ZNSE AND ZNTE

Citation
Cg. Vandewalle et Db. Laks, NITROGEN DOPING IN ZNSE AND ZNTE, Solid state communications, 93(5), 1995, pp. 447-450
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
5
Year of publication
1995
Pages
447 - 450
Database
ISI
SICI code
0038-1098(1995)93:5<447:NDIZAZ>2.0.ZU;2-Y
Abstract
We present a theoretical investigation and discussion of N doping in Z nSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential f ormation of complexes between the N acceptor and native defects, the c hange in lattice constant of ZnSe due to heavy N doping, and some prob lems associated with N as an acceptor dopant.