We present a theoretical investigation and discussion of N doping in Z
nSe and ZnTe, based on first-principles calculations. We find that the
experimentally observed trend in doping efficiency can be attributed
to the higher solubility of N in ZnTe. We also discuss the potential f
ormation of complexes between the N acceptor and native defects, the c
hange in lattice constant of ZnSe due to heavy N doping, and some prob
lems associated with N as an acceptor dopant.