PHOTOLUMINESCENCE STUDY OF SHALLOW IMPURITIES LOCALIZATION IN TRANSMUTATION DOPED GAAS

Authors
BYKOVSKY VA KHITKO VI SHOH VF UTENKO VI
Citation
Va. Bykovsky et al., PHOTOLUMINESCENCE STUDY OF SHALLOW IMPURITIES LOCALIZATION IN TRANSMUTATION DOPED GAAS, Solid state communications, 93(5), 1995, pp. 459-459
Citations number
NO
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
93
Issue
5
Year of publication
1995
Pages
459 - 459
Database
ISI
SICI code
0038-1098(1995)93:5<459:PSOSIL>2.0.ZU;2-V