ENERGY-LEVELS DUE TO N-TYPE DELTA-DOPING IN SILICON

Authors
SCOLFARO LMR BELIAEV D ENDERLEIN R LEITE JR
Citation
Lmr. Scolfaro et al., ENERGY-LEVELS DUE TO N-TYPE DELTA-DOPING IN SILICON, Solid state communications, 93(5), 1995, pp. 469-469
Citations number
1
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
93
Issue
5
Year of publication
1995
Pages
469 - 469
Database
ISI
SICI code
0038-1098(1995)93:5<469:EDTNDI>2.0.ZU;2-Y