PARTIAL TOP DIELECTRIC STACK DISTRIBUTED BRAGG REFLECTORS FOR RED VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS

Room temperature continuous wave operation of red (lambda(0) similar t o 660 mm) vertical cavity surface emitting laser arrays is reported, T he 1 x 64 arrays have a pitch of 100 mu m with device diameters of 15 mu m. Grown by metalorganic vapor phase epitaxy, the devices consist o f an AlGaInP strained quantum well optical cavity active region surrou nded by AlGaAs distributed Bragg reflectors (DBR's), The top coupling DBR includes a partial dielectric stack, deposited after implanted dev ice fabrication, All 64 devices operate simultaneously with peak outpu t powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages less than or equal to 2.7 V, The differential quantum efficiencies exc eed 10%.