DIELECTRICALLY-BONDED LONG-WAVELENGTH VERTICAL-CAVITY LASER ON GAAS SUBSTRATES USING STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS

Authors
CHUA CL LIN CH ZHU ZH LO YH HONG M MANNAERTS JP BHAT R
Citation
Cl. Chua et al., DIELECTRICALLY-BONDED LONG-WAVELENGTH VERTICAL-CAVITY LASER ON GAAS SUBSTRATES USING STRAIN-COMPENSATED MULTIPLE-QUANTUM WELLS, IEEE photonics technology letters, 6(12), 1994, pp. 1400-1402
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
12
Year of publication
1994
Pages
1400 - 1402
Database
ISI
SICI code
1041-1135(1994)6:12<1400:DLVLOG>2.0.ZU;2-I
Abstract
We present a novel low temperature bonding technique for fabricating l ong wavelength vertical cavity surface emitting lasers (VCSEL's). The technique relies on a 750 Angstrom-thick intermediate spin-on glass la yer to join a highly efficient InP-based InGaAs-InGaAsP strain-compens ated multiple quantum well (SC-MQW) gain medium on a GaAs substrate, W e fabricated the device on GaAs in order to take advantage of highly r eflective AlAs-GaAs Bragg reflectors, The optically-pumped device has a low threshold pump power of 4.2 kW/cm(2) at room temperature and ope rates at a wavelength of 1.44 mu m.