1.3-MU-M WAVELENGTH, INGAASP-INP FOLDED-CAVITY SURFACE-EMITTING LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

A 1.3-mu m wavelength, strained multiple quantum well InGaAsP-InP fold ed-cavity surface-emitting laser was fabricated using CH4:H-2 reactive ion etching to form the 45 degrees angled vertical output facet. A pu lsed threshold current of 45 mA and a 20% efficiency for the surface-e mitted light were achieved for 550 mu m-long hv 5 mu m-wide devices, T he threshold current is the lowest reported for folded-cavity surface- emitting lasers operating at this wavelength, making the devices suita ble for many optoelectronic smart pixel and interconnection applicatio ns. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH4:H-2 reactive ion etching.