IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS

We derive theoretical expressions for the impedance of quantum-well la sers below and above threshold based on a simple rate equation model, These electrical laser characteristics are shown to be dominated by pu rely electrical parameters related to carrier capture/transport and ca rrier re-emission, The results of on-wafer measurements of the impedan ce of high-speed In0.35Ga0.65As/GaAs multipie-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to e xtract the effective carrier escape time and the effective carrier lif etime, and to estimate the effective carrier capture/transport time,